Sputter chamber as well as vacuum transport chamber and vacuum handling apparatus with such chambers

ABSTRACT

A Vacuum transport chamber for disk-shaped substrates, has a base plate structure has an interior surface which borders an interior of the chamber on one side thereof. A covering structure is situated parallel and opposite an interior surface of the base plate structure. The structure has at least two substrate passage openings which are adapted to a substrate disk surface. A transport device which is rotationally drivingly movable about a rotation axis perpendicular to the base plate structure. At least one substrate receiving device is brought into alignment with a respective one of the openings. A controlled sealing arrangement establishes an edge of at least one of the openings with the substrate holding device brought into alignment therewith and a substrate provided thereon.

BACKGROUND OF THE INVENTION

The present invention relates to a sputtering chamber having at least one sputtering source with a new sputter surface at least approximately symmetrical with respect to a central axis and a substrate carrier which is rotatable in a driven manner about a substrate carrier axis. The central axis and the substrate carrier axis are oblique with respect to one another.

Furthermore, the present invention relates to a vacuum treatment system having the above-mentioned sputtering chamber, a vacuum transport chamber for disk-shaped workpieces, and finally a vacuum treatment system having a vacuum transport chamber.

U.S. Pat. Nos. 4,818,561 and 4,664,935 describe conventional sputtering chambers. The central axis of the sputtering source is arranged at an oblique angle with respect to an axis of rotation of a substrate carrier. The substrate carrier is rotated in a driven manner about the substrate carrier axis. With this sputtering chamber, coating uniformities of better than ±4% are achieved on wafers, whose diameters may be up to 200 mm.

During the manufacturing of storage disks, particularly of optical storage disks, such as mini floppy disks or CDs; further, during the manufacturing of masters, but also for the manufacturing of piezoelectric wafers, of wafers for the production of semiconductors, in this case, particularly also for wafers for the implementation of SAW's (Surface Acoustic Waves), it is extremely important to reach a uniform layer thickness distribution which is at least equally good as, if not better than, that which can be achieved with the known sputtering chambers. In addition, the coating rates should be as high as possible in order to achieve coating times which are as short as possible and thus production rates which are as high as possible.

SUMMARY OF THE INVENTION

It is an object of the invention to suggest a sputtering chamber of the initially mentioned type by means of which, while the coating rates are increased, layer thickness homogeneities can be achieved which are even better than those achievable by means of the known sputtering chambers.

This object has been achieved, according to the present invention, by providing an improved sputtering chamber, specifically one in which the sputtering source is a magnetron sputtering source.

While, in a conventional sputtering source, the sputtering surface of the target is removed essentially uniformly, the situation is completely different with magnetron sputtering sources. Because of the tunnel-shaped magnetic field which is inherent to the magnetron sputtering sources, is built up over the sputtering surface of the target and is closed in itself, a surrounding erosion trough is formed on the sputtering surface. The erosion trough, as the sputtering-off time increases, varies the direction characteristic of the sputtered-off target material. If several tunnel fields are provided, surrounding erosion troughs may be formed.

Although magnetron sputtering sources result in higher sputtering-off rates and thus also higher coating rates than conventional sputtering sources, they are much more critical with respect to the achievable uniformity of the layer thicknesses. It is therefore even more astonishing that with the use according to the invention of a magnetron sputtering source at the sputtering chamber according to the invention, not only a higher coating rate can be achieved and thus shorter coating times, but also coating thickness uniformities are achieved which are at least as good as and even significantly better than those achievable with conventional sputtering chambers.

It is another object of the present invention to integrate the above-mentioned sputtering chamber according to the invention into a vacuum treatment system such that, in an automated manner, the fast coating times, which can be achieved by the sputtering chamber according to the invention, can also be utilized to their full extent. This is achieved by a vacuum treatment system in which the above-mentioned sputtering chamber is connected by way of one or several transport chambers with at least one lock chamber, at which substrates are transferred inward from the surroundings into the vacuum or are transferred outward from the vacuum into the surroundings.

Furthermore, a vacuum transport chamber is suggested which is conceived particularly for short transport cycles, which is inventive per se and which can be ideally combined with the sputtering chamber according to the invention to form a vacuum treatment system with extremely short transport cycles and, in addition, particularly in preferred embodiments of the transport chamber according to the invention, leads to extremely short inward-transfer and outward-transfer cycles of substrates to be coated and coated substrates.

The sputtering chamber and the transport chamber according to the invention as well as the systems according to the invention are suitable particularly for the coating of optical data storage substrates as well as masters for the manufacturing of such optical data storage disks or of piezoelectric wafers or wafers for the production of semiconductors.

BRIEF DESCRIPTION OF THE DRAWINGS

Other objects, advantages and novel features of the present invention will become apparent from the following detailed description of the invention when considered in conjunction with the accompanying drawings.

FIG. 1 is a schematic view of a sputtering chamber according to the invention;

FIGS. 2 a and 2 b are top views of a substrate carrier arrangement, as provided on the sputtering chamber of FIG. 1 according to the invention, for defining the relationships with respect to substrates deposited thereon;

FIG. 3 is a schematic view of the arrangement of the substrate carrier and the magnetron sputtering target on a sputtering chamber according to the invention for defining the mutual geometrical position relationships;

FIG. 4 is a representation similar to FIG. 1 of a sputtering chamber according to the invention but having a double magnetron source;

FIG. 5 is a schematic view of another currently preferred embodiment of the sputtering chamber according to the invention, in which a process space is partitioned off;

FIG. 6 is a schematic side view of a vacuum treatment system according to the invention with a sputtering chamber according to the invention, shown in partial cross-section;

FIG. 7 is a top view of a vacuum treatment system according to the invention basically constructed similar to the system of FIG. 6, but having several treatment stations and an inlet/outlet lock;

FIG. 8 is a partially simplified view of a transport chamber according to the invention, combined with a sputtering chamber according to the invention for forming a vacuum treatment system of a preferred construction according to the invention;

FIG. 9 is a top view of the transport chamber along line II-II of FIG. 8; and

FIG. 10 is a graph of layer thicknesses removed along the substrate radius as the result of described coating experiments.

DETAILED DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a sputtering chamber having a magnetron sputtering source 1. The tunnel-shaped magnetron magnetic field H which is closed in itself and extends around the central axis Z of the source 1 is schematically illustrated above the sputtering surface 3 of a target arrangement of the magnetron sputtering source 1. In the top view, that is, viewed in the direction of the central axis Z, the sputtering surface 3 of the magnetron source 1 may have a rectangular, square, elliptical design etc., but is preferably rotationally symmetrical with respect to the central axis Z. However, the central axis Z is definitely situated in a plane of symmetry of the sputtering surface 3 viewed in the top view. Furthermore, the sputtering surface, in its new condition, called a new sputter surface, may at least essentially be planar or define a concave surface. A single tunnel-shaped magnetic field H may be provided which is closed in itself and extends around the central axis Z, or two or more fields may be provided.

In addition, the one or several provided magnetron fields H, which are closed in themselves and extend around the central axis Z, may be constructed in a steady-state manner or in a varying manner with respect to time, as, for example, by providing moving magnet arrangements below the target arrangement with permanent magnets and/or solenoids or, generated by solenoids which are selectively triggered with respect to time.

With reference to FIG. 1, the sputtering chamber according to the invention has a substrate carrier 5 which, in a driven manner 6 is rotationally movable about a substrate carrier axis A. The substrate carrier 5 is constructed such that it can accommodate an individual substrate 7 (FIG. 2 a), preferably centered with respect to the substrate carrier axis A, or it can accommodate several substrates 7 a, preferably also in a centered manner, (FIG. 2 b). In this case, the one substrate 7 or also the several substrates 7 a can definitely overlap the substrate carrier 5, as illustrated in FIGS. 2 a and 2 b at 7′ and 7 a′.

In the following description, the diameter φ_(S) indicates either the substrate diameter according to FIG. 2 a, or the diameter of the outer substrate boundary line according to FIG. 2 b.

On the sputtering chamber according to the invention, differently shaped substrates, like square or rectangular substrates, can definitely also be sputter-coated.

The magnetron sputtering process can take place in a reactive or non-reactive manner, and the magnetron sputtering source DC, DC+AC, can be operated with pulsed DC or with pure AC, in which case AC can be chosen up into the HF-range.

The central axis Z and the substrate carrier axis A are oblique with respect to one another. They do not necessarily intersect one another.

For this reason, in the following only a—partially preferred—special case of the “intersection point” of both axes Z, A is addressed; more generally, the “site of the smallest spacing” of the two axes is mentioned.

When the angle β is addressed which the axes Z and A take up with respect to one another, in the case of inclined axes, this angle is determined in that one axis is displaced in parallel until both axes are situated in a plane. This results in the angle β in this plane.

However, in a preferred embodiment, as shown in FIG. 1 at point P, the central axis Z of the source 1 and the substrate carrier axis A intersect at least almost.

Irrespective of whether the two mentioned axes Z and A intersect or are inclined with respect to one another, they definitely preferably enclose an angle β, to which the following applies: 30°≦β≦60°, preferably 40°≦β≦55°, particularly preferably 43°≦β≦50°, in this case, extremely preferably an angle β≈45°.

When this angle β is precisely maintained, the uniformity of the thickness of the deposited layer is optimized.

As schematically illustrated In FIG. 3, the site L of the shortest distance between the central axis Z and the substrate carrier axis A is preferably situated at least approximately on the center of the substrate carrier 5, in this case, preferably on the surface to be coated of a centered substrate 7, 7′.

The sputtering source according to the invention can be arranged in the space in an arbitrarily oriented manner.

As further illustrated in FIG. 3, the projection of the substrate surface onto a plane E_(Z) perpendicular to the central axis Z is preferably smaller than the projection of the new sputter surface onto this plane E_(Z).

FIG. 3 qualitatively shows the erosion trough 15 which forms during the operation on the sputtering surface and extends around the central axis Z, or a second erosion trough 15 a, when two surrounding tunnel-shaped magnetic fields, which are closed in themselves, are implemented.

With respect to the central axis Z, r_(Tr) indicates the radius of the site of the largest erosion depth of the radially outermost erosion trough 15.

In a preferred embodiment of the sputtering chamber according to the invention, the following ratio is obtained between this radius r_(TR) and the distance D between the new sputter surface and the site L or between the new sputter surface and the substrate carrier 5 ¼≦r _(Tr) /D≦⅔.

Furthermore, the following preferably applies according to FIG. 3 to the diameter φ_(T) of the projection of a rotationally symmetrical new sputter surface onto the plane E_(Z) and the mentioned distance D ¾≦Φ_(T) /D≦2, in this case, particularly the following applies Φ_(T)≈1.2 D.

With respect to the diameter φ_(S) (see definition above), with respect to the above-mentioned distance D, the following preferably applies Φ_(S) /D≦1.8.

Furthermore, the following preferably applies in a preferred embodiment with respect to the above-mentioned diameter φ_(S) and the above-mentioned sputtering surface diameter or sputtering surface projection diameter Φ_(T) 0.5≦Φ_(S)/Φ_(T)≦2.4. preferably 1≦Φ_(S)/Φ_(T)≦2.4.

Particularly in the case of axes Z and A which, as illustrated in FIG. 3, intersect at least approximately, the indicated dimensioning rules result in an optimal utilization of the material sputtered off the target 4 with respect to the material placed on the substrate or substrates, specifically of at least 10%. In this case, layer thickness deviations along the coated substrate surfaces of no more than ±1% are reachable without, particularly on a plane round target, special measures having to be taken with respect to the formation of the erosion troughs.

In addition, the above-mentioned dimensioning rules lead to the following advantages: minimal sensitivity of the resulting uniformity of the layer thicknesses to variations of D and thus also to the increasing erosion of the target in the course of its service life; minimal sensitivity of the uniformity of the layer thicknesses to changes of the erosion profile or profiles; and minimal sensitivity of the uniformity of the layer thicknesses to positioning errors of the substrate or substrates on the substrate carrier 5.

In a particularly preferred embodiment the following applies: 50 mm≦Φ_(S)≦400 mm, in this case, preferably 50 mm≦Φ_(S)≦300 mm, particularly preferably and particularly used for individual substrates in a centered manner with respect to the substrate carrier axis A, diameter Φ_(S) of 64 mm (particularly for mini floppy disks), 120 mm (particularly for CDs), 160 to 240 mm (for CD masters). For the highly precise depositing of layers on piezoelectric wafers, the substrate holding device is preferably sized for substrate diameters of at least 75 mm; for the treatment of wafers for the semiconductor production for the receiving of wafers, it is sized with diameters of between 150 and 300 mm.

As schematically illustrated in FIG. 4, two or more sources 10 a, 10 b, of which at least one is a magnetron source, may act simultaneously or alternately on the same substrate carrier 5 or the substrates placed thereon. As a result, it becomes possible to deposit, for example, alloys while maintaining the initially mentioned requirements or other compounds while including the possibility of also sputtering reactively. Precise positioning of the substrate carrier 5 in the Z- and X-direction allows for adjustment of sburce-specific coating characteristics.

FIG. 5 schematically shows another preferred embodiment of the sputtering source according to the invention. The magnetron source 1 and the substrate carrier 5 or substrates deposited thereon, in the machining position, close off a process space PR in that the substrate carrier 5 or a substrate itself are placed so far against side walls 22 of the vacuum chamber that the free rotating movement 4 is still ensured. For this purpose, as illustrated in FIG. 5, the substrate carrier can not only be driven to carry out the mentioned rotating movement co but can preferably also be lifted linearly into the machining position and be lowered from it. By the uncoupling of the process space P from other chamber parts, particularly with movable parts, the particle contamination is reduced during the coating.

FIG. 6 schematically shows a first embodiment of a vacuum treatment system according to the invention having at least one sputtering chamber 20 according to the invention. The sputtering chamber 20, together with the magnetron source 21, which, for maintenance purposes or for a target change, can be folded open as illustrated by a broken line, is flanged to a transport chamber 23. A transport device 27, which is rotationally movable about an axis of rotation B by a drive 25, operates in the transport chamber 23. One, two or more (see FIG. 10) transport arms 29 with at least one component radial with respect to the axis B project to the outside from the axis of rotation B and each carry substrate carriers 31. As indicated by the double arrow F, the substrate carriers 31 can be moved out in a driven manner; in particular, can be moved into the machining position and be moved back therefrom, and further, as explained above, can be rotated in a driven manner about the axis A of the substrate carriers 31.

Analogous to the top view of FIG. 6, FIG. 7 is a top view of a system with several treatment stations, at least one of which being a sputtering chamber according to the invention.

Directly at the transport chamber 29 or via additional transport chambers, at least one lock chamber 33 is provided, whereby the substrates to be treated are transferred inward from the surroundings into the vacuum or are transferred outward from the vacuum into the surroundings. After being transferred inward, the substrates are fed by one or several transport devices, optionally after passing through additional treatment steps, to a sputter coating station according to the invention, such as station 21 of FIG. 6.

FIG. 8, on the one hand, illustrates a transport chamber according to the invention, combined with a magnetron sputtering chamber of the above-mentioned type according to the invention, which together, on the other hand, form a system according to the invention.

FIG. 9 is a sectional view according to Line II-II of the arrangement according to FIG. 8. The combination of the transport chamber and the lock chamber to be described in the following with the above-described magnetron sputtering chamber according to the invention results in an extremely compact system configuration with short transfer and transport cycles and, because of the sputtering chambers according to the invention, in coating cycles which are just as short.

The vacuum transport chamber 41 according to the invention has an interior 43 which, on the one hand, is bounded by a base plate 45 and, on the other hand, is bounded by a side wall structure 47 as well as a covering structure 49 situated opposite the base plate 45. The interior surface of the covering structure 49 can preferably be spaced away from the interior surface of the base plate 45 by a distance d which preferably is no more than identical to the thickness D of the base plate 45, preferably and as illustrated, even significantly smaller.

In the covering structure 49 of the transport chamber according to the invention, workpiece pass-through openings 51 are provided; in the case of the embodiment illustrated in FIGS. 8 and 9, two of such openings 51 being provided. Naturally, more than two of the above-mentioned openings 51 may be provided.

A transport device 57, whose currently preferable construction is illustrated particularly in FIG. 9, operates in the transport chamber according to the invention. Flanged laterally to the base plate 45 or to the side wall structure 47, a rotational axis hosing 51 is provided, wherein the driving axis of rotation 55 of the transport device 57 is disposed. The axis of rotation 55 aligned perpendicularly to the interior surface of the base plate 45, in the illustrated preferred embodiment of the transport chamber according to the invention, carries a transport ladle 59 as the transport device 57. The transport ladle 59 has a stem 60 and a plate-type workpiece receiving device 61. As illustrated in FIG. 9, the transport ladle 59 is swivelled from a first swivelling position, in which the workpiece receiving device 61 is aligned with one of the two openings 51, into the second position illustrated by a broken line, in which the workpiece receiving device 61 is aligned with the second of the above-mentioned openings 51. As illustrated, the axis of rotation 55 of the transport device 57 is arranged offset with respect to a connection line of the central opening axis Z₅₁ entered in FIG. 9. Furthermore, the openings 51 at the transport chamber according to the invention are situated so close to one another that, as illustrated particularly in FIG. 8, just enough space exists in-between, for - as will be explained in the following—arranging or flanging one machining station to one of the two openings.

As a result of the above-mentioned position of the axis of rotation 55 as well as the minimizing of the spacing A of the openings (FIG. 9), optimally short transport paths are implemented for the transport device 57, with swivelling angles 1 of no more than 120°, preferably no more than 90°.

In the preferred illustrated embodiment, a lock chamber is integrated at one opening 51. One opening 51 a is provided with a cover 65 which, as illustrated in FIG. 8, can be swivelled in a motor-driven manner about a swivelling axis 67. This axis is preferably situated between the openings 51. The cover 65 seals off by way of sealing devices 69 against outer edge parts of the opening 51 a on the covering structure 49. The sealing devices 69, in the closed state can optionally be braced by the linear motor cover drive which will be described below.

FIG. 8 illustrates the workpiece receiving device 61 in alignment with the opening 51 a as well as in an alignment with the additional opening 51, 51 b. In the area of the opening 51 a, a sealing arrangement is provided at the inner opening edge surface of the covering structure 49, preferably in the form of a hydraulically, specifically pneumatically operable expandable seal 71, which is acted upon by pressure medium by way of a connection piece 73. By the admission of pressure to the expandable seal 71, this seal 71 is sealingly pressed against the edge area of the workpiece receiving device 61. In order to absorb this peripheral stressing of the seal without any distortion, the workpiece receiving device 61 abuts on the base plate side, particularly in its peripheral area. In the illustrated preferred embodiment, this abutting takes place by way another surrounding, hydraulically, but preferably pneumatically operable and expandable seal 75, which is acted upon by pressure medium by way of one or several connections 77. As illustrated, the surrounding seals 71 and 75 may be situated opposite one another, in each case on inner base plate and covering structure surfaces, or may optionally be offset. In any case, they accommodate between one another, with the admission of pressure, the workpiece receiving device 61 in a sealingly bracing manner.

The seal 75 closes off a remaining chamber volume 79 between the underside of the workpiece receiving device 61 and the interior surface of the base plate 45. This volume as well as the actual lock chamber between the closed cover 65 and the peripherally sealed top side of the workpiece receiving device 61 is pumped down through a center opening 81 (see also FIG. 9) on the workpiece receiving device 61 and a pump connection piece 83, preferably centered with respect to the opening axis Z₅₁, on the base plate 45. For a further reduction of the lock chamber volume, the cover 65, as illustrated in FIG. 8, is indented toward the workpiece receiving device 61 to such an extent that its inner surface just barely does not touch a workpiece 85 held in the receiving device 61.

If the workpiece 85, as, for example, the storage disks, particularly the optical storage disks, is provided with a center opening, the reaching-through from the pump connection piece 83 to the lock chamber volume above the workpiece takes place unhindered through this center opening of the workpiece. If the disk-shaped workpiece is constructed without a center opening, (not shown) radial connection channels in the workpiece-facing surface of the workpiece receiving device 61 can improve this reaching-through, as, for example, a network of radial grooves.

The preferred, extremely compact vacuum treatment system illustrated in FIGS. 8 and 9 uses the transport chamber according to the invention with only just two openings 51, specifically openings 51 a and 51 b. While, as explained above, a smallest-volume lock chamber is integrated at the opening 51 a, a workpiece treatment station is flanged to the second opening 51 b. In the implemented form of the illustrated system, particularly for the sputter coating of circular-disk-shaped workpieces, particularly of storage disks, in this case, particularly of optical storage disks, the sputtering station 80 according to the invention is mounted on the opening 51 b.

In this case, the central axis Z_(S) of the sputtering source 80 is sloped away from the other opening 51 a such that the linear drive 83 for the swivelling movement of the cover 65 can be mounted on the mounting flange 82 for the inclined mounted sputtering source 80.

In the illustrated sputtering system, a central part 84 can be lifted off the workpiece receiving device 61. On the base plate 45, a lifting and rotating drive 86 is mounted which is aligned with the axis Z_(51b). If the workpiece receiving device 61 is centered in the opening 51 b, by way of the drive 86, as illustrated by letter F in FIG. 8, via the central part 84, the workpiece 85 in the machining position is lifted with respect to the sputtering source 80 and simultaneously, as illustrated by reference letter 4, is caused to rotate.

In a preferred embodiment, the sputtering source 80 is mounted to be disposed swivellably about an axis 87, which axis 87, with respect to the opening 51 b, is situated opposite the axis 67 of the cover 65 and is parallel thereto. As a result, the sputtering source 80 can be folded away without impairing the cover drive 83 on the flange 82, as, for example, for servicing purposes or for replacing the target, as illustrated in FIG. 8 by reference letter Ω.

The transport chamber according to the invention and the vacuum treatment system according to the invention achieve a highly compact, transport-path-optimized, constructively simple system and chamber which permits a high throughput while highly uniform coating layer thicknesses are implemented. It is particularly suitable for the transport and the treatment of circular-disk-shaped workpieces, particularly for storage disks, and specifically for the treatment of optical storage disks.

With a system according to the invention of FIGS. 8 and 9, substrates were coated, centered with respect to the substrate carrier axes, which substrates had diameters of 200 mm and 240 mm. The following applied in this case:

-   -   Magnetron source: ARQ920G-source with an NiV 7 round target sold         by the applicant     -   target diameter: 155 mm     -   sputtering power: 500 W or 1 kW     -   deposited layer thicknesses: 50 to 100 nm     -   target/substrate spacing (D): 100 mm and 140 mm     -   angle of slope β between the central axis of the source and the         substrate carrier axis:     -   45°, 48° and 50°     -   argon pressure: 2×10⁻³ mbar         Use for Master Disks

In FIG. 10, the coating results of the above-described example are compiled. They demonstrate the extremely good uniformity of the deposited layer thickness as well as its optimization by a slight change of the above-mentioned angle of slope β.

The foregoing disclosure has been set forth merely to illustrate the invention and is not intended to be limiting. Since modifications of the disclosed embodiments incorporating the spirit and substance of the invention may occur to persons skilled in the art, the invention should be construed to include everything within the scope of the appended claims and equivalents thereof. 

1. Vacuum transport chamber for disk-shaped substrates, comprising: a base plate structure having an interior surface which borders an interior of the chamber on one side thereof, a covering structure which is situated essentially parallel opposite an interior surface of the base plate structure and which has at least two substrate passage openings which are adapted to a substrate disk surface, and a transport device which is rotationally drivingly movable about an axis of rotation perpendicular to the base plate structure, in the chamber, with at least one substrate receiving device so as to be brought into alignment with a respective one of the openings, wherein a controlled sealing arrangement establishes an edge of at least one of the openings with the substrate holding device brought into alignment therewith and a substrate provided thereon.
 2. Vacuum transport chamber according to claim 1, wherein one of the openings is equipped with a cover, closeable in a motor-driven manner with respect to surroundings, whereby the cover and the workpiece receiving device brought into alignment with the one opening and a workpiece on the respective receiving device forming interior-side and exterior-side lock valves for a lock chamber integrated at the one opening.
 3. Vacuum transport chamber according to claim 2, wherein the cover is configured to be indented toward the chamber for reducing lock volume to be pumped down.
 4. Vacuum transport chamber according to claim 1, wherein the sealing arrangement has at least one seal which extends on an interior side of the chamber around an opening and is one of pneumatically and hydraulically operated.
 5. Vacuum transport chamber according to claim 2, wherein the sealing arrangement comprises a seal which surrounds on the chamber side an opening provided with the cover and is one of pneumatically and hydraulically operable, and an additional surrounding sealing arrangement is arranged opposite this seal on the interior basic plate structure surface and is one of pneumatically and hydraulically operable, the two sealing arrangements accommodating in a sealing manner between one another the workpiece receiving device aligned with the opening.
 6. Vacuum transport chamber according to claim 1, wherein the workpiece receiving device has at least one central opening.
 7. Vacuum transport chamber according to claim 3, wherein the cover is indented such that, in a closed state thereof, an interior surface thereof is closely adjacent a workpiece disk on the workpiece receiving device aligned with the opening.
 8. Vacuum transport chamber according to claim 1, wherein two of the openings have centers with a connection line therebetween offset to the axis of rotation of the transport device, and the workpiece receiving device, from alignment with one of the openings to an alignment with the other of the openings, is configured to carry out a swivelling movement about the axis of rotation of not more than 120_.
 9. Vacuum transport chamber according to claim 8, wherein the openings on the covering structure are separated such that the flanging-on of a vacuum treatment chamber can take place in-between.
 10. Vacuum transport chamber according to claim 8, wherein the axis of rotation of the transport device is flanged laterally onto the base plate structure.
 11. Vacuum transport chamber according to claim 1, wherein at least one of a workpiece lifting drive and a workpiece rotating drive is mounted at at least one of the openings, opposite the covering structure in a centered manner with respect to at least one opening, on the base plate structure.
 12. Vacuum transport chamber according to claim 11, wherein the workpiece receiving device has a central part which is arranged to be lifted perpendicularly to an interior base plate structure surface off the remaining transport device part connected with the axis of rotation, with which central part the at least one lift and rotating drive is then controllably bringable into an operative connection when the workpiece receiving device is aligned with the one opening having the drive.
 13. Vacuum treatment system having a vacuum transport chamber comprising: a base plate structure having an interior surface which borders and interior of the chamber on one side thereof, a covering structure which is situated essentially parallel opposite an interior surface of the base plate structure and which has at least two substrate passage opening which are adapted to a substrate disk surface, and a transport device which is rotationally drivingly movable about an axis of rotation perpendicular to the base plate structure, in the chamber, with at least one substrate receiving device so as to be brought into alignment with a respective one of the openings, wherein a controlled sealing arrangement establishes an edge of at least one of the openings with the substrate holding device brought into alignment therewith and a substrate provided thereon, wherein a vacuum treatment station is flanged at at least one of the openings onto the covering structure of the vacuum transport chamber.
 14. System according to claim 13, wherein the station is at least one sputtering source with a new sputter surface at least approximately symmetrical with respect to a central axis, a substrate carrier which is arranged to be drivingly rotatable about a substrate carrier axis, wherein the central axis and the substrate carrier axis are oblique with respect to one another, and the sputtering source is a magnetron sputtering source..
 15. System according to claim 14, further comprising a vacuum transport chamber wherein one of the openings is equipped with a cover closeable in a motor-driven manner with respect to surroundings, whereby the cover and the workpiece receiving device brought into alignment with the one opening and a workpiece on the respective receiving device forming interior-side and exterior-side lock valves for a lock chamber integrated at the one opening, two of the openings are provided on the transport chamber, and the central axis of the sputtering source on one of the two openings is sloped away from the other opening, and a motor drive for a cover is arranged at the other opening on a connection flange for the source.
 16. System according to claim 15, wherein the cover is swivellably disposed on a swivel bearing with a first swivelling axis parallel to the covering structure, which swivelling axis is arranged between the openings and the source is swivellably disposed about a second swivelling axis parallel to the covering structure, which second swivelling axis, with respect to the opening provided with the source, is situated opposite the first swivelling axis of the cover.
 17. Method for producing coated data storage disks or wafers, comprising carrying out at least one coating step by an oblique-angled magnetron sputtering on to the rotating substrate.
 18. Use of a sputtering chamber having at least one sputtering source with a new sputter surface at least approximately symmetrical with respect to a central axis, a substrate carrier which is arranged to be drivingly rotatable about a substrate carrier axis, wherein the central axis and the substrate carrier axis are oblique with respect to one another, and the sputtering source is a magnetron sputtering source, having a transport chamber of a system wherein the sputtering chamber is connected by at least one transport chamber with at least one lock chamber, in which substrates are transferrable from surroundings thereof into a vacuum and are transferrable out of the vacuum into the surroundings for coating optical data storage substrates, masters, piezoelectric wafers or wafers for semiconductor production.
 19. Sputtering chamber comprising at least one sputtering source with a new sputter surface at least approximately symmetrical with respect to a first axis, perpendicular on said new sputter surface, a substrate carrier which is arranged to be drivingly rotatable about a second axis, wherein said first and said second axes are oblique with respect to one another and said sputtering source is a magnetron sputtering source with at least one toroidal magnetic field around said first axis with symmetric field polarity considered in a cutting plane through said new sputter surface and containing said first axis.
 20. The chamber of claim 19, wherein said new sputter surface is substantially rotationally symmetrical with respect to said first axis.
 21. The chamber of claim 19, wherein said first axis and said second axis intersect at least approximately.
 22. The chamber of claim 19, wherein, with respect to an angle β between said first axis and said second axis, 30°≦β≦60°.
 23. The chamber of claim 19, wherein, with respect to an angle β between said first axis and said second axis, 40°≦β≦55°.
 24. The chamber of claim 19, wherein, with respect to an angle β between said first axis and said second axis, 43°≦β≦50°.
 25. The chamber of claim 19, wherein an angle β between said first axis and said second axis is approximately 45°.
 26. The chamber of claim 19, wherein said first axis and said second axis have a smallest mutual spacing situated at least approximately on a surface which is to be sputter coated of a substrate applied to said substrate carrier.
 27. The chamber of claim 19, wherein said substrate carrier is located within said chamber at least approximately horizontally.
 28. The chamber of claim 19, with at least one substrate on said substrate carrier and wherein a projection of said new sputter surface onto a plane perpendicular to said first axis is larger than a projection of a surface of said substrate to be sputter coated onto said plane.
 29. The chamber of claim 19, further comprising at least two of said sputtering sources.
 30. The chamber of claim 19, wherein there is provided in said new sputter surface at least one circular erosion ditch said toroidal magnetic field beneath said ditch having a circular locus of larger erosion depth, the radius of said locus with respect to said first axis being r_(Tr) said first and second axes having a smallest mutual spacing at a locus spaced by a distance D from said new sputter surface and wherein ¼≦r_(Tr)/D≦⅔.
 31. The chamber of claim 19, wherein said new sputter surface is substantially rotationally symmetrical with respect to said first axis and has a diameter Φ_(T) and wherein a locus of smallest mutual spacing of said first and of said second axis has a distance D to said new sputter surface and wherein ¾≦Φ_(T)/D≦2.
 32. The chamber of claim 31, wherein Φ_(T)=approx. 1.2 D.
 33. The chamber of claim 19, wherein said substrate carrier has a circular receiving surface for at least one substrate said receiving surface having a diameter Φ_(s) with respect to said second axis, a locus of smallest mutual spacing of said first and second axes having a distance D from said new sputter surface and wherein Φ_(S)/D≦1.8.
 34. The chamber of claim 33, further comprising at least one of said substrate on said receiving surface said locus being situated at least approx. on a plane defined by a surface of said at least one substrate to be sputter coated.
 35. The chamber of claim 19, wherein said new sputter surface is rotationally symmetrical with respect to said first axis and said substrate carrier comprises a substrate receiving surface which is rotationally symmetrical with respect to said second axis, said new sputter surface defining for a diameter Φ_(T) with respect to said first axis and said substrate receiving surface defining for a diameter Φ_(s) with respect to said second axis and wherein 0.5≦Φ_(s)/Φ_(t)≦2.4.
 36. The chamber of claim 35, wherein 1≦Φ_(s)/Φ_(T)≦2.4.
 37. The chamber of claim 19, wherein said substrate carrier has a substrate receiving surface which is rotationally symmetrical with respect to said second axis and defines, for a diameter Φ_(s) with respect to said second axis, 50 mm≦Φ_(s)≦400 mm.
 38. The chamber of claim 37, wherein there is valid 50 mm≦Φ_(S)≦300 mm.
 39. The chamber of claim 38 wherein said diameter Φ_(S) amounts to one of 64 mm and of 120 mm and of 160 mm and of 240 mm.
 40. The chamber of claim 19, wherein said substrate carrier is linearly drivingly displaceable in a direction of said second axis.
 41. The chamber of claim 19, wherein a surface of said substrate carrier facing said new sputter surface and said new sputter surface bound a process space on two sides thereon. 